The Study of Optical Properties of III <sub>2</sub> –VI <sub>3</sub> Defect Semiconductor Group Compounds Ga <sub>2</sub> S <sub>3</sub> , Ga <sub>2</sub> Se <sub>3</sub> , In <sub>2</sub> S <sub>3</sub> , and In <sub>2</sub> Se <sub>3</sub>
نویسندگان
چکیده
Herein, high-quality III2VI3 (III = Ga, In and VI S, Se) single crystals are successfully grown by a chemical vapor transport method. X-ray diffraction Raman spectroscopy verify crystal structure, crystalline state, vibration modes of the as-grown crystals. According to structure characterization, Ga2S3 is crystallized in monoclinic whereas Ga2Se3 belongs cubic zincblende phase. The In2S3 tetragonal, that In2Se3 may come from hexagonal layered structure. four structures most stable phases Ga2S3, Ga2Se3, In2S3, In2Se3, respectively. All mostly phase each different changing. This result identifies nature III–VI group defect Modulated thermoreflectance (TR) optical transmission measurements series compounds are, respectively, implemented. results indicate all defective direct semiconductors. Photoluminescence photoconductivity carried out, experimental demonstrated analyzed herein.
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ژورنال
عنوان ژورنال: Advanced photonics research
سال: 2021
ISSN: ['2699-9293']
DOI: https://doi.org/10.1002/adpr.202000110